Probing Organic Transistors with Infrared Beams

Beams of extremely bright, tightly focused infrared (IR) light generated at Berkeley Lab’s Advanced Light Source (ALS) have been used to directly probe the electronic properties of nanometer-scale field-effect transistors made from organic polymers. The results of this unique study could help the future development of sensors, displays, and plastic electronic components for cell phones, wireless internet devices, and other mobile electronic equipment.